Subthreshold Analytical Model of Asymmetric Gate Stack Triple Metal Gate all Around MOSFET (AGSTMGAAFET) for Improved Analog Applications

In this paper, we have proposed a 2D analytical model for Asymmetric gate stack triple metal MOSFET(AGSTMGAAFET) and performed comparative analysis with the simulation results obtained using SILVACO 3D software. Existing devices such as all around single (SMGAAFET), (TMGAAFET), (GSSMGAAFET), (GSTMGAAFET) asymmetric (AGSTMGAAFET) been compared our structure AGSTMGAAFET. Our device provides excellent performance in terms of drain current, transconductance, output conductance, current gain, maximum transducer power gain which shows device’s suitability various analog applications moreover potential electric field plots twostep profile extremely low near region ordains ability to suppress SCE’s like DIBL hot-carrier effect. The show good convergence values validate correctness model.